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PDF AM2305 Data sheet ( Hoja de datos )
| Número de pieza | AM2305 | |
| Descripción | MOSFET -30V P-CHANNEL ENHANCEMENT MODE | |
| Fabricantes | AiT Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM2305 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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AiT Semiconductor Inc.
www.ait-ic.com
AM2305
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM2305 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. Advanced trench technology to
provide excellent RDS(ON).
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application, and low in-line power loss are needed in a
very small outline surface mount package.
AM2305 is available in a SOT-23 package.
ORDERING INFORMATION
-30V/-4A, RDS(ON) = 55mΩ@VGS = -10V
-30V/-3A, RDS(ON) = 64mΩ@VGS = -4.5V
-30V/-2A, RDS(ON) = 85mΩ@VGS = -2.5V
Super high density cell design for extremely
low RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Available in a SOT-23 package.
APPLICATION
High Frequency Point-of-Load Synchronous
New working DC-DC Power System
Load Switch
P CHANNEL MOSFETwww.DataSheet.co.kr
Package Type
Part Number
SOT-23
AM2305E3R
E3
AM2305E3VR
Note
R: Tape & Reel
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
REV1.0
- NOV 2010 RELEASED –
-1-
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
AiT Semiconductor Inc.
www.ait-ic.com
AM2305
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
TYPICAL CHARACTERISTICS
1. Output Characteristics
2. Drain-Source On Resistance
3. Drain Source On Resistance
4. Transfer Characteristics
www.DataSheet.co.kr
5. Gate Charge
6. Drain Source Resistance
REV1.0
- NOV 2010 RELEASED –
-5-
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AM2305.PDF ] | |
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