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PDF PSMN3R0-60PS Data sheet ( Hoja de datos )
| Número de pieza | PSMN3R0-60PS | |
| Descripción | N-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
Rev. 01 — 23 November 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC convertors
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 60 V
ID drain current
Tmb = 25 °C; VGS = 10 V;
[1] -
-
100 A
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 306 W
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 80 A;
VDS = 12 V; see Figure 13
and 14
- 28 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11
and 12
-
2.4 3
mΩ
[1] Continuous current is limited by package.
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
54 - - V
60 - - V
VGS(th)
gate-source threshold ID = 1 mA; VDS= VGS; Tj = 25 °C; see Figure 8
2
3
4
V
voltage
and 9
VGSth
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
ID = 1 mA; VDS= VGS; Tj = 175 °C; see Figure 9
ID = 1 mA; VDS= VGS; Tj = -55 °C; see Figure 9
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 10
1
-
-
-
-
-
-
--
- 4.6
0.05 10
- 500
2 100
2 100
- 7.2
V
V
µA
µA
nA
nA
mΩ
RG gate resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11 and 12
f = 1 MHz
-
2.4 3
mΩ
- 1.1 - Ω
QG(tot)
total gate charge
ID = 80 A; VDS = 12 V; VGS = 10 V;
see Figure 13 and 14
- 130 - nC
QGS
gate-source charge
ID = 80 A; VDS = 12 V; VGS = 10 V;
see Figure 14 and 13
- 43 - nC
QGD
gate-drain charge
ID = 80 A; VDS = 12 V; VGS = 10 V;
see Figure 13 and 14
- 28 - nC
Ciss
input capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
8079 -
pF
see Figure 15 and 16
Coss
output capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
see Figure 15
-
971 -
pF
Crss reverse transfer
capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
see Figure 15 and 16
-
492 -
pF
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VDS = 30 V; RL = 0.5 Ω; VGS = 10 V;
RG(ext) = 1.5 Ω
- 31 - ns
- 26 - ns
- 77 - ns
- 22 - ns
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17 -
0.88 1.2 V
trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 30 V
- 54 - ns
- 97 - nC
PSMN3R0-60PS_1
Product data sheet
Rev. 01 — 23 November 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
8. Revision history
Table 7. Revision history
Document ID
Release date
PSMN3R0-60PS
20091123
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PSMN3R0-60PS_1
Product data sheet
Rev. 01 — 23 November 2009
© NXP B.V. 2009. All rights reserved.
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