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PDF SI4936CDY Data sheet ( Hoja de datos )
| Número de pieza | SI4936CDY | |
| Descripción | Dual N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si4936CDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.040 at VGS = 10 V
30
0.050 at VGS = 4.5 V
ID (A)d
5.8
5.5
Qg (Typ.)
2.8 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
APPLICATIONS
• Low Current DC/DC Conversion
• Notebook System Power
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
D1
G1
Top View
Ordering Information: Si4936CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
G2
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
5.8
4.6
5.0a, b
4.0a, b
20
1.9
1.4a, b
2.3
1.5
1.7a, b
1.1a, b
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 110 °C/W.
d. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
Typical
58
42
Maximum
75
55
Unit
°C/W
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
Si4936CDY
Vishay Siliconix
6
4
2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
1.5
1.2
0.9
0.6
0.3
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Case
150
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
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