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PDF SI2337DS Data sheet ( Hoja de datos )
| Número de pieza | SI2337DS | |
| Descripción | P-Channel 80-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si2337DS
Vishay Siliconix
P-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 80 0.270 at VGS = - 10 V
0.303 at VGS = - 6 V
ID (A)a
- 2.2
- 2.1
Qg (Typ)
7
FEATURES
• TrenchFET® Power MOSFET
RoHS
COMPLIANT
TO-236
(SOT-23)
G1
S2
3D
S
G
Top View
Si2337DS (E7)*
*Marking Code
Ordering Information: Si2337DS-T1-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
- 80
± 20
- 2.2
- 1.75
- 1.2b, c
- 0.96b, c
-7
- 2.1
- 0.63b, c
11
6.0
2.5
1.6
0.76b, c
0.48b, c
- 50 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t ≤ 10 sec
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 166 °C/W.
Document Number: 73533
S-71597-Rev. C, 30-Jul-07
Symbol
RthJA
RthJF
Typical
120
40
Maximum
166
50
Unit
°C/W
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Si2337DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.8 2.5
2.4
2.0
2.0
1.5
1.6
1.2 1.0
0.8
0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Current Derating*
150
0.5
0.0
25
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
10
TA
L IA
BV - VDD
1
1.0E-6
10.0E-6 100.0E-6 1.0E-3 10.0E-3
TA - Time In Avalanche (sec)
Single Pulse Avalanche Capability
*The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73533
S-71597-Rev. C, 30-Jul-07
www.vishay.com
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