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Número de pieza | STL24NM60N | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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STL24NM60N
N-channel 600 V, 0.200 Ω, 16 A PowerFLAT™ 8x8 HV
MDmesh™ II Power MOSFET
Features
Type
STL24NM60N
VDSS @
TJmax
650 V
RDS(on)
max
< 0.215 Ω
ID
16 A (1)
1. The value is rated according to Rthj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
3
3
'
"OTTOM VIEW
$
0OWER&,!4 X (6
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STL24NM60N
Marking
24NM60N
Package
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
November 2011
Doc ID 18363 Rev 2
1/14
www.st.com
14
Datasheet pdf - http://www.DataSheet4U.net/
1 page www.DataSheet.co.kr
STL24NM60N
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 16 A, VGS = 0
-
-
16 A
64 A
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 16 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 4)
-
340
4.6
27
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 16 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 4)
-
4.4
5.7
28
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 18363 Rev 2
5/14
Datasheet pdf - http://www.DataSheet4U.net/
5 Page www.DataSheet.co.kr
STL24NM60N
5 Packaging mechanical data
Figure 10. PowerFLAT™ 8x8 HV tape
T (0.30±0.05)
D0 ( 1.55±0.05)
P2 (2.0±0.1)
D1 ( 1.5 Min)
Packaging mechanical data
P0 (4.0±0.1)
E (1.75±0.1)
K0 (1.10±0.1)
P1 (12.00±0.1)
A0 (8.30±0.1)
Note: Base and Bulk quantity 3000 pcs
Figure 11. PowerFLAT™ 8x8 HV package orientation in carrier tape
8229819_Tape_revA
Doc ID 18363 Rev 2
11/14
Datasheet pdf - http://www.DataSheet4U.net/
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet STL24NM60N.PDF ] |
Número de pieza | Descripción | Fabricantes |
STL24NM60N | N-channel Power MOSFET | STMicroelectronics |
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