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PDF SI7716ADN Data sheet ( Hoja de datos )
| Número de pieza | SI7716ADN | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si7716ADN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0135 at VGS = 10 V
30
0.0165 at VGS = 4.5 V
ID (A)a, g
16
16
Qg (Typ.)
7.3 nC
FEATURES
• Halogen-free
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
PowerPAK® 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3
G
4
APPLICATIONS
• DC/DC Conversion
- System Power
D
G
Bottom View
Ordering Information: Si7716ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Limit
30
± 20
16a, g
16g
12b, c
9.5b, c
32g
15
11.25
16a, g
2.9b, c
27.7
17.7
3.5b, c
2.2b, c
- 55 to 150
260
RoHS
COMPLIANT
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
29
3.6
Maximum
36
4.5
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
g. Package limited.
Document Number: 68704
S-81450-Rev. A, 23-Jun-08
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
Si7716ADN
Vishay Siliconix
32
24
Package Limited
16
8
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
35 2.0
28 1.6
21 1.2
14 0.8
7 0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Case Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68704
S-81450-Rev. A, 23-Jun-08
www.vishay.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI7716ADN.PDF ] | |
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