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PDF CMUDM8004 Data sheet ( Hoja de datos )
| Número de pieza | CMUDM8004 | |
| Descripción | SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
| Fabricantes | Central Semiconductor | |
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CMUDM8004
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUDM8004
is an Enhancement-mode P-Channel Field Effect
Transistor, manufactured by the P-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low rDS(on)
and Low Theshold Voltage.
MARKING CODE: 84C
SOT-523 CASE
• Devices are Halogen Free by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
FEATURES:
• ESD Protection up to 2kV
• Low rDS(on)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-523 Surface Mount Package
• Complimentary N-Channel MOSFET: CMUDM7004
MAXIMUM RATING: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
PD
TJ, Tstg
30
8.0
450
250
-65 to +150
UNITS
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
Qg(tot)
Qgs
Qgd
gFS
Crss
Ciss
Coss
VGS=8.0V, VDS=0
VDS=30V, VGS=0
VGS=0, ID=100μA
VDS=VGS, ID=250μA
VGS=0, IS=100mA
VGS=4.5V, ID=430mA
VGS=2.5V, ID=200mA
VGS=1.8V, ID=100mA
VDS=10V, VGS=4.5V, ID=1.0A
VDS=10V, VGS=4.5V, ID=1.0A
VDS=10V, VGS=4.5V, ID=1.0A
VDS =10V, ID=100mA
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
30
0.5
200
0.880
0.384
0.128
MAX
3.0
1.0
1.0
1.1
1.1
2.0
3.3
10
55
15
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
nC
nC
nC
mS
pF
pF
pF
R1 (7-December 2010)
www.DataSheet4U.com
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| PDF Descargar | [ Datasheet CMUDM8004.PDF ] | |
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