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PDF STF30NM60N Data sheet ( Hoja de datos )
| Número de pieza | STF30NM60N | |
| Descripción | N-channel MOSFET | |
| Fabricantes | STMicroelectronics | |
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DataSheet.in
STB30NM60N,STI30NM60N,STF30NM60N
STP30NM60N, STW30NM60N
N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET
TO-220, TO-220FP, TO-247, D2PAK, I2PAK
Features
Type
VDSS @
TJmax
STB30NM60N 650 V
STI30NM60N 650 V
STF30NM60N 650 V
STP30NM60N 650 V
STW30NM60N 650 V
RDS(on)
max
<0.13Ω
<0.13Ω
<0.13Ω
<0.13Ω
<0.13Ω
ID
25A
25A
25A(1)
25A
25A
PW
190 W
190 W
40 W
190 W
190 W
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
3
1
D²PAK
3
2
1
TO-247
123
I²PAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB30NM60N
STI30NM60N
STF30NM60N
STP30NM60N
STW30NM60N
Marking
30NM60N
30NM60N
30NM60N
30NM60N
30NM60N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
July 2008
Rev 2
1/18
www.st.com
18
1 page  
DataSheet.in
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 300 V, ID = 12.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Min. Typ. Max Unit
20 ns
24 ns
125 ns
70 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 25 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 25 A, di/dt = 100 A/µs
VDD= 100 V (see Figure 23)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 25 A, di/dt = 100 A/µs
VDD= 100 V Tj = 150°C
(see Figure 23)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
25 A
100 A
1.3 V
540 ns
10 µC
36 A
630 ns
12 µC
36 A
5/18
5 Page 
DataSheet.in
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.48
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
e 2.40
10.40
2.70
0.393
0.094
0.409
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85
0.147
0.151
Q 2.65
2.95
0.104
0.116
11/18
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| PDF Descargar | [ Datasheet STF30NM60N.PDF ] | |
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