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PDF APT31N60SCS Data sheet ( Hoja de datos )
| Número de pieza | APT31N60SCS | |
| Descripción | Super Junction MOSFET | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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600V 31A 0.100Ω
APT31N60BCS
APT31N60SCS
APT31N60BCSG* APT31N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
COOLMOS
Power Semiconductors
Super Junction MOSFET
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
• Popular TO-247 or Surface Mount D3 Package
www.DataSheet4U.com
(B)
TO-247
D3PAK
(S)
D
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
IDM
VGS
PD
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
MOSFET dv/dt Ruggedness (VDS = 480V)
Avalanche Current 2
Repetitive Avalanche Energy 2
Single Pulse Avalanche Energy 3
All Ratings: TC = 25°C unless otherwise specified.
APT31N60B_SCS(G) UNIT
600 Volts
31
19 Amps
93
±30 Volts
255 Watts
2.00 W/°C
-55 to 150
260
°C
50 V/ns
11 Amps
1.2 mJ
800
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V(BR)DSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 18A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.2mA)
600
0.100
10
TBD
±100
2.1 3 3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Volts
Ohms
µA
nA
Volts
1 page  
Typical Performance Curves
10%
td(on)
tr
5%
90%
10%
5%
Switching Energy
Gate Voltage
TJ125°C
Drain Current
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
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APT15DQ60
VDD
ID VDS
D.U.T.
G
Figure 20, Inductive Switching Test Circuit
APT31N60B_SCS(G)
90%
td(off)
tf
90%
Switching Energy
10%
0
Gate Voltage
TJ125°C
Drain Voltage
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
D3PAK Package Outline
e3 100% Sn
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
Revised
4/18/95
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Source
Drain
Gate
Dimensions in Millimeters (Inches)
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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