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PDF APT94N65B2C3G Data sheet ( Hoja de datos )
| Número de pieza | APT94N65B2C3G | |
| Descripción | Super Junction MOSFET | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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650V
94A
APT94N65B2C3
APT94N65B2C3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
COOLMOS
Power Semiconductors
Super Junction MOSFET
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
• Dual die (parallel)
• Popular T-MAX Package
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Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
T-MaxTM
D
G
S
MAXIMUM RATINGS
Symbol Parameter
VDSS Drain-Source Voltage
ID Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage Continuous
PD Total Power Dissipation @ TC = 25°C
All Ratings per die: TC = 25°C unless otherwise specified.
APT94N65B2C3S(G) UNIT
650 Volts
94
60 Amps
282
20 Volts
415 Watts
TJ,TSTG Operating and Storage Junction Temperature Range
TL Lead Temperature: 0.063" from Case for 10 Sec.
dv/dt Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C)
IAR Avalanche Current 2
EAR Repetitive Avalanche Energy 2
( Id = 7A, Vdd = 50V )
EAS Single Pulse Avalanche Energy ( Id = 3.5A, Vdd = 50V )
-55 to 150
260
50
7
1
1800
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV(DSS)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA)
Drain-Source On-State Resistance 3 (VGS = 10V, ID = 60A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5.8mA)
650
0.03 0.035
1.0 50
100
±200
2.1 3 3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
μA
nA
Volts
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
1 page  
Typical Performance Curves
10%
td(on)
Gate Voltage
T
TJ = 125 C
tr Collector Current
90%
5%
10%
5%
Collector Voltage
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
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APT30DF60
VDD
IC VCE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
APT94N65B2C3(G)
90%
td(off)
Collector Current
tf
90%
Gate Voltage
TJ = 125 C
Collector Voltage
10%
Switching Energy
0
Figure 19, Turn-off Switching Waveforms and Definitions
T-MAX® (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
e1 100% Sn Plated
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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| PDF Descargar | [ Datasheet APT94N65B2C3G.PDF ] | |
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