IRF6636 판매점 - DirectFET Power MOSFET

IRF6636 반도체 회로 부품 판매점

DirectFET Power MOSFET

International Rectifier

PD - 96977B

IRF6636www.DataSheet4U.com

DirectFET™ Power MOSFET

RoHS compliant containing no lead or bromide

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Typical values (unless otherwise specified)

VDSS

VGS

RDS(on)

20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V

Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)

18nC 6.1nC 1.9nC 7.3nC 10nC 1.8V

Ideal for CPU Core DC-DC Converters

Optimized for for Control FET socket of Sync. Buck Converter

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

ST DirectFET™ ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SQ SX ST

MQ MX MT

Description

The IRF6636 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the

lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6636 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6636 has been optimized for parameters that are critical in synchronous buck operating from 12 volt

buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Absolute Maximum Ratings

Parameter

VDS Drain-to-Source Voltage

VGS

ID @ TA = 25°C

ID @ TA = 70°C

ID @ TC = 25°C

Gate-to-Source Voltage

Continuous Drain Current, VGS @ 10V

IDM Pulsed Drain Current

EAS Single Pulse Avalanche Energy

IAR Avalanche Current

Max.

±20

140

Units

ID = 18A

TJ = 125°C

TJ = 25°C

0 1 2 3 4 5 6 7 8 9 10

VGS, Gate -to -Source Voltage (V)

Fig 1. Typical On-Resistance vs. Gate Voltage

Notes:

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET MOSFETs

Repetitive rating; pulse width limited by max. junction temperature.

www.irf.com

6.0

5.0 ID= 14A VDS= 16V

4.0 VDS= 10V

3.0

2.0

1.0

0.0

10 20 30

QG Total Gate Charge (nC)

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

Starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 14A.

Surface mounted on 1 in. square Cu board, steady state.

TC measured with thermocouple mounted to top (Drain) of part.

06/13/05

IRF6636

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

–––

VGS(th)

Gate Threshold Voltage

1.55

∆VGS(th)/∆TJ

IDSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

–––

IGSS

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

gfs Forward Transconductance

Qg Total Gate Charge

Qgs1 Pre-Vth Gate-to-Source Charge

Qgs2 Post-Vth Gate-to-Source Charge

Qgd Gate-to-Drain Charge

Qgodr

Gate Charge Overdrive

Qsw Switch Charge (Qgs2 + Qgd)

Qoss Output Charge

RG Gate Resistance

td(on)

Turn-On Delay Time

tr Rise Time

td(off)

Turn-Off Delay Time

tf Fall Time

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

Diode Characteristics

–––

Parameter

Min.

IS Continuous Source Current –––

(Body Diode)

ISM Pulsed Source Current

–––

(Body Diode)

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

–––

Typ.

–––

3.2

4.6

–––

-6.4

–––

5.9

1.9

6.1

4.1

8.0

–––

6.2

2420

780

360

Typ.

–––

7.3

www.DataSheet4U.com

Max. Units

Conditions

–––

4.5

6.4

2.45

V VGS = 0V, ID = 250µA

mV/°C Reference to 25°C, ID = 1mA

mΩ VGS = 10V, ID = 18A

VGS = 4.5V, ID = 14A

V VDS = VGS, ID = 250µA

––– mV/°C

1.0

150

100

-100

–––

µA VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

nA VGS = 20V

VGS = -20V

S VDS = 10V, ID = 14A

––– VDS = 10V

––– nC VGS = 4.5V

ID = 14A

––– See Fig. 17

–––

––– nC VDS = 10V, VGS = 0V

1.5 Ω

––– VDD = 16V, VGS = 4.5V

––– ID = 14A

––– ns Clamped Inductive Load

–––

––– VGS = 0V

––– pF VDS = 10V

––– ƒ = 1.0MHz

Max. Units

Conditions

2.8 MOSFET symbol

A showing the

140 integral reverse

p-n junction diode.

1.0 V TJ = 25°C, IS = 14A, VGS = 0V

24 ns TJ = 25°C, IF = 14A

11 nC di/dt = 100A/µs

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

www.irf.com

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제조업체: International Rectifier

( ir )

IRF6636 mosfet

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[ IRF6636.PDF ]

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국내 전력반도체 판매점

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IRF6636 반도체 회로 부품 판매점

DirectFET Power MOSFET

국내 전력반도체 판매점

일반적인 전자부품 판매점

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