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PDF SI7439DP Data sheet ( Hoja de datos )
| Número de pieza | SI7439DP | |
| Descripción | P-Channel 150-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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P-Channel 150-V (D-S) MOSFET
Si7439DP
Viswwhwa.DyatSaSihleiceto4Un.cioxm
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
−150
0.090 @ VGS = −10 V
0.095 @ VGS = −6 V
ID (A)
−5.2
−5.0
PowerPAK SO-8
6.15 mm
D
8D
7D
6D
5
S
1S
5.15 mm
2S
3G
4
Bottom View
Ordering Information: Si7439DP-T1—E3
FEATURES
D TrenchFETr Power MOSFETS
D Ultra-Low On-Resistance Critical for Application
D Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% Rg and Avalanche Tested
APPLICATIONS
D Active Clamp in Intermediate DC/DC Power
Supplies
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS −150
VGS "20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
−5.2
−3.0
−4.1
−2.4
−50
−4.2
−1.6
−40
80
5.4 1.9
3.4 1.2
−55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
Document Number: 73106
S-41526—Rev. A, 16-Aug-04
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si7439DP
Viswwhwa.DyatSaSihleiceto4Un.cioxm
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
Single Pulse
0.05 0.02
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 73106
S-41526—Rev. A, 16-Aug-04
www.vishay.com
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