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SYNC POWER |
SPP1023
Dual P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP1023 is the Dual P-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
P-Channel
-20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-563 (SC-89-6L) package design
www.DataSheet4U.com
PIN CONFIGURATION( SOT-563 / SC-89-6L)
PART MARKING
2007/10/31 Ver.1
Page 1
SPP1023
Dual P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Symbol
S1
G1
D2
S2
G2
D1
Description
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain1
ORDERING INFORMATION
Part Number
SPP1023S56RG
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPP1023S56RG : Tape Reel ; Pb – Free
Package
SOT-563
Part Marking
A
ABSOULTE MAXIMUM RATINGS
www(.TDAat=a2S5he℃et4UU.ncolemss otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=80℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
2007/10/31 Ver.1
Typical
-20
±12
-0.45
-0.35
-1.0
-0.3
0.35
0.19
-55/150
-55/150
Unit
V
V
A
A
A
W
℃
℃
Page 2
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