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PDF ST3407 Data sheet ( Hoja de datos )
| Número de pieza | ST3407 | |
| Descripción | P Channel Enhancement Mode MOSFET | |
| Fabricantes | Stanson Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ST3407 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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ST3407
P Channel Enhancement Mode MOSFET
-3.6A
DESCRIPTION
ST3407 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
1
S
2
FEATURE
� -30V/-4.0A, RDS(ON) = 60mΩ
@VGS = -10V
� -30V/-3.2A, RDS(ON) = 80mΩ
@VGS = -4.5V
� Super high density cell design for
extremely low RDS(ON)
� Exceptional on-resistance and
maximum DC current capability
� SOT-23-3L package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
3
A7YA
12
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3407S23RG
SOT-23-3L
A7YA
※ Process Code : A ~ Z ; a ~ z
※ ST3407S23RG S 23: SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407 2006. V1
1 page  
www.DataSheet4U.com
ST3407
P Channel Enhancement Mode MOSFET
-3.6A
TYPICAL CHARACTERICTICS (25℃ unless otherwise noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407 2006. V1
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ST3407.PDF ] | |
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