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PDF PSMN013-80YS Data sheet ( Hoja de datos )
| Número de pieza | PSMN013-80YS | |
| Descripción | N-channel LFPAK 80 V 12.9 MOhm Standard Level MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
Rev. 01 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
Dynamic characteristics
Tj ≥ 25 °C; Tj ≤ 150 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V;
RGS = 50 Ω; unclamped
QGD gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14;
see Figure 15
QG(tot) total gate charge
VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14;
see Figure 15
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13
Min Typ Max Unit
- - 80 V
- - 60 A
- - 106 W
-55 -
175 °C
- - 70 mJ
- 8 - nC
- 37 - nC
- - 19.8 mΩ
- 9.7 12.9 mΩ
1 page  
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PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C; see
Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 10; see Figure 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 125 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 175 °C; see
Figure 12
VGS = 10 V; ID = 15 A; Tj = 100 °C; see
Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C; see
Figure 13
RG internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 25 A; VDS = 40 V; VGS = 10 V; see
Figure 14; see Figure 15
QGS
QGS(th)
gate-source charge
pre-threshold
gate-source charge
ID = 25 A; VDS = 40 V; VGS = 10 V; see
Figure 14; see Figure 15
QGS(th-pl) post-threshold
gate-source charge
QGD
VGS(pl)
gate-drain charge
gate-source plateau
voltage
ID = 25 A; VDS = 40 V
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 40 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
VDS = 40 V; RL = 1.6 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
Min Typ Max Unit
73 - - V
80 - - V
1- - V
- - 4.6 V
234V
- - 3 µA
- - 40 µA
- - 100 nA
- - 100 nA
- - 31 mΩ
- - 19.8 mΩ
- 9.7 12.9 mΩ
- 0.68 - Ω
- 31 - nC
- 37 - nC
- 11 - nC
- 7 - nC
- 4 - nC
- 8 - nC
- 4.8 - V
- 2420 - pF
- 224 - pF
- 125 - pF
- 20 - ns
- 15 - ns
- 37 - ns
- 10 - ns
© NXP B.V. 2009. All rights reserved.
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PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
8. Revision history
Table 7. Revision history
Document ID
Release date
PSMN013-80YS_1
20090625
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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