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PDF STW43NM60ND Data sheet ( Hoja de datos )
| Número de pieza | STW43NM60ND | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
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Features
STW43NM60ND
N-channel 600 V - 0.075 Ω - 35 A - TO-247
FDmesh™ Power MOSFET (with fast diode)
Preliminary Data
Type
STW43NM60ND
VDSS @
TJMAX
650 V
RDS(on)
max
< 0.095 Ω
ID
35 A
■ The worldwide best RDS(on)*area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities.
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STW43NM60NDD
Marking
43NM60ND
Package
TO-247
Packaging
Tube
February 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/9
www.st.com
9
1 page  
STW43NM60ND
3 Test circuit
Test circuit
Figure 2. Switching times test circuit for
www.datasheet4u.com resistive load
Figure 3. Gate charge test circuit
Figure 4. Test circuit for inductive load
Figure 5. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 6. Unclamped inductive waveform
Figure 7. Switching time waveform
5/9
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STW43NM60ND.PDF ] | |
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