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PDF SI1300BDL Data sheet ( Hoja de datos )
| Número de pieza | SI1300BDL | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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N-Channel 20-V (D-S) MOSFET
Si1300BDL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.85 at VGS = 4.5 V
1.08 at VGS = 2.5 V
ID (A)a
0.4
0.35
Qg (Typ)
335
FEATURES
D TrenchFETr Power MOSFET
D 100 % Rg Tested
RoHS
COMPLIANT
SC-70 (3-LEADS)
G1
3D
S2
Marking Code
KE XX
Lot Traceability
and Date Code
Part # Code
D
G
Top View
Ordering Information: Si1300BDL–T1–E3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS 20
Gate-Source Voltage
Continuous Drain Current (TJ = 150 _C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 _C
TC = 70 _C
TA = 25 _C
TA = 70 _C
TC = 25 _C
TA = 25 _C
TC = 25 _C
TC = 70 _C
TA = 25 _C
TA = 70 _C
VGS
ID
IDM
IS
PD
TJ, Tstg
"8
0.4
0.32
0.37b, c
0.30b, c
0.5
0.18
0.14b, c
0.2
0.14
0.19
0.12b, c
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t p 5 sec
Steady State
Notes:
a. Based on TC = 25 _C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 5 sec
d. Maximum under steady state conditions is 360 _C/W.
Document Number: 73557
S–52388—Rev. A, 21–Nov–05
Symbol
RthJA
RthJF
Typical
540
450
Maximum
670
570
Unit
_C/W
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TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Si1300BDL
Vishay Siliconix
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
Notes:
PDM
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 360 _C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
*The power dissipation PD is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73557.
Document Number: 73557
S–52388—Rev. A, 21–Nov–05
www.vishay.com
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SI1300BDL.PDF ] | |
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