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PDF SI1470DH Data sheet ( Hoja de datos )

Número de pieza SI1470DH
Descripción N-Channel MOSFET
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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No Preview Available ! SI1470DH Hoja de datos, Descripción, Manual

New Product
N-Channel 30-V (D-S) MOSFET
Si1470DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.066 at VGS = 4.5 V
30
0.095 at VGS = 2.5 V
ID (A)
4.0a
4.0
Qg (Typ)
4.85
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FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• Load Switch
RoHS
COMPLIANT
SOT-363
SC-70 (6-LEADS)
D
D1
D2
G3
6D
5D
4S
Marking Code
AK XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1470DH-T1-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current
Repetitive Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipationa
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 12
5.1
4.0
3.8b, c
3.1b, c
12
10
5
2.3
1.3b, c
2.8
1.8
1.5b, c
1.0b, c
- 55 to 150
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 74277
S-62443–Rev. A, 27-Nov-06
Symbol
RthJA
RthJF
Typical
60
34
Maximum
80
45
Unit
°C/W
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1

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SI1470DH pdf
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
6 3.6
5 3.0
4
Package Limited
3
2.4
1.8
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2
1
1.2
0.6
0
0 25 50 75 100 125 150
TC – Case Temperature (°C)
Current Derating*
0.0
0
Si1470DH
Vishay Siliconix
25 50 75 100 125
TC – Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74277
S-62443–Rev. A, 27-Nov-06
www.vishay.com
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