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Número de pieza | SiHFBF30 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SiHFBF30 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Power MOSFET
IRFBF30, SiHFBF30
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
900
VGS = 10 V
78
10
42
Single
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3.7
D
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universially preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRFBF30PbF
SiHFBF30-E3
IRFBF30
SiHFBF30
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 36 mH, RG = 25 Ω, IAS = 3.6 A (see fig. 12).
c. ISD ≤ 3.6 A, dI/dt ≤ 70 A/µs, VDD ≤ 600, TJ ≤ 150 °C.
d. 1.6 mm from case.
LIMITE
900
± 20
3.6
2.3
14
1.0
250
3.6
13
125
1.5
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91122
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1
1 page www.DataSheet4U.com
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFBF30, SiHFBF30
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
A
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91122
S-Pending-Rev. A, 23-Jun-08
www.vishay.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SiHFBF30.PDF ] |
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