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PDF APM9424K Data sheet ( Hoja de datos )
| Número de pieza | APM9424K | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics Coropration | |
| Logotipo |  |
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APM9424K
N-Channel Enhancement Mode MOSFET
Features
• 20V/10A,
RDS(ON)=10mΩ(typ.) @ VGS=4.5V
RDS(ON)=15mΩ(typ.) @ VGS=2.5V
• Super High Dense Cell Design
www.DataSheet4U.c•om Reliable and Rugged
• Lead Free Available (RoHS Compliant)
Applications
Pin Description
D
D
D
D
S
S
S
G
Top View of SOP − 8
( 5,6,7,8 )
D D DD
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
(4)
G
Ordering and Marking Information
SS S
(1, 2, 3)
N-Channel MOSFET
APM9424
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM9424 K :
APM9424
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
www.anpec.com.tw
1 page  
APM9424K
Typical Characteristics (Cont.)
www.DataSheet4U.com
Output Characteristics
30
V = 3, 4, 5, 6, 7, 8, 9, 10V
GS
25
20
15
2V
10
5
1.5V
0
0 2 4 6 8 10
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
25
20
15
V =4.5V
GS
10
V =2.5V
GS
5
0
0 5 10 15 20 25 30
ID - Drain Current (A)
Transfer Characteristics
30
25
20
15
T =125oC
j
10
T =25oC
j
T =-55oC
j
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.8
IDS=250µΑ
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
5
www.anpec.com.tw
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet APM9424K.PDF ] | |
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