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PDF SI7458DP Data sheet ( Hoja de datos )
| Número de pieza | SI7458DP | |
| Descripción | N-Channel 20-V (D-S) Fast Switching MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si7458DP
Vishay Siliconix
N-Channel 20-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0045 @ VGS = 4.5 V
0.0075 @ VGS = 2.5 V
ID (A)
22
19
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PowerPakt SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D Synchronous Rectifier–Low Output Voltage
D Portable Computer Battery Selection or
Protection
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
22
17.6
4.3
5.2
3.3
20
"12
50
–55 to 150
13.4
10.7
1.6
1.9
1.2
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71821
S-20012—Rev. A, 04-Mar-02
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SI7458DP.PDF ] | |
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