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PDF STN1HNC60 Data sheet ( Hoja de datos )

Número de pieza STN1HNC60
Descripción N-CHANNEL MOSFET
Fabricantes STMicroelectronics　
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STN1HNC60 Hoja de datos, Descripción, Manual

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STN1HNC60
N-CHANNEL 600V - 7Ω - 0.4A - SOT-223
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STN1HNC60
600 V
<8Ω
0.4 A
s TYPICAL RDS(on) = 7Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s AC ADAPTORS AND BATTERY CHARGERS
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (1)
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2001
Value
Unit
600 V
600 V
±30 V
0.4 A
0.25 A
1.6 A
2.5 W
0.02 W/°C
3.5 V/ns
–65 to 150
°C
150 °C
(1)ISD ≤0.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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1 page




STN1HNC60 pdf
STN1HNC60
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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