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PDF STP22NS25Z Data sheet ( Hoja de datos )
| Número de pieza | STP22NS25Z | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STB22NS25Z - STP22NS25Z
N-channel 250V - 0.13Ω - 22A - TO-220 / D2PAK
Zener-protected MESH OVERLAY™ Power MOSFET
General features
Type
STB22NS25Z
STP22NS25Z
VDSS
250V
250V
RDS(on)
<0.15Ω
<0.15Ω
■ 100% avalanche tested
■ Extremely high dv/dt capability
ID
22A
22A
Description
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performance. The new patented
STrip layout coupled with the Company’s
proprietary edge termination structure, makes it
suitable in coverters for lighting applications.
Applications
■ Switching application
3
2
1
TO-220
3
1
D²PAK
Internal schematic diagram
Order codes
Part number
STB22NS25Z
STP22NS25Z
Marking
B22NS25Z
P22NS25Z
Package
D²PAK
TO-220
Packaging
Tape & reel
Tube
June 2006
Rev 2
1/14
www.st.com
14
1 page  
STB22NS25Z - STP22NS25Z
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(Voff) Turn-off- delay time
tf Fall time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD = 125V, ID = 11A
RG = 4.7Ω VGS = 10V
(see Figure 12)
VDD = 125V, ID = 11 A,
RG = 4.7Ω, VGS = 10V
(see Figure 12)
Vclamp = 200V, ID = 22 A,
RG = 4.7Ω, VGS = 10V
(see Figure 12)
Min. Typ. Max Unit
20 ns
30 ns
100 ns
78 ns
37 ns
65 ns
110 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 22 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A, di/dt = 100A/µs
VDD = 50V, Tj = 150°C
(see Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
292
3065
21
22
88
1.6
A
A
V
ns
nC
A
Table 8.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min Typ Max Unit
BVGSO(1)
Gate-source breakdown
voltage
Igs=± 500µA (open drain)
20
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
5/14
5 Page 
STB22NS25Z - STP22NS25Z
Package mechanical data
DIM.
A
A1
A2
B
B2
C
C2
D
D1
E
E1
G
L
L2
L3
M
R
V2
MIN.
4.4
2.49
0.03
0.7
1.14
0.45
1.23
8.95
10
4.88
15
1.27
1.4
2.4
0º
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
TYP
8
8.5
0.4
MAX.
4.6
2.69
0.23
0.93
1.7
0.6
1.36
9.35
10.4
5.28
15.85
1.4
1.75
3.2
4º
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
inch
TYP.
0.315
0.334
0.015
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.208
0.625
0.055
0.068
0.126
1
11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STP22NS25Z.PDF ] | |
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