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PDF STD5NE10 Data sheet ( Hoja de datos )
| Número de pieza | STD5NE10 | |
| Descripción | N - CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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® STD5NE10
N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(o n)
ID
STD5NE10
100 V
< 0.4 Ω
5A
s TYPICAL RDS(on) = 0.32 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE TESTED
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
3
1
IPAK
TO-251
(Suffix ”-1”)
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS Drain-source Volt age (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VG S
ID
ID
IDM(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
Tstg Storage T emperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 1999
Va l u e
100
100
± 20
5
3.5
20
25
0.17
0.6
-65 to 175
175
( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
1/9
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet STD5NE10.PDF ] | |
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