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PDF 2SK2499 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2499 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2499, 2SK2499-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2499 is N-Channel MOS Field Effect Transistor de-
signed for high current switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 9 mΩ (VGS = 10 V, ID = 25 A)
RDS(on)2 = 14 mΩ (VGS = 4 V, ID = 25 A)
• Low Ciss Ciss = 3 400 pF TYP.
• High Avalanche Capability.
• Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 60 V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±50
A
Drain Current (pulse)*
ID(pulse) ±200
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
75 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 50 A
Single Avalanche Energy**
EAS 250 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2
10.0
1.3 ± 0.2
4
1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1
2.54
2.8 ± 0.2
2.54 1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
4.8 MAX.
1.3 ± 0.2
1.0 ± 0.3
1.4 ± 0.2
(2.54) (2.54)
123
(0.5(0R.)8R)
0.5 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-25Z (SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Gate Protection Diode
Source
Document No. D10045EJ1V0DS00 (1st edition)
Date Published May 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
15 VGS=4V
10
VGS=10V
5
0 ID = 25A
- 50 0 50 100 150
Tch - Channel Temperature - ˚C
100 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
10 000
1 000
Crss
Ciss
Coss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt =100A/µs
VGS = 0
100
10
1.0
0.1
1.0 10
ID - Drain Current - A
100
2SK2499, 2SK2499-Z
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
4V
1
VGS = 0
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
SWITCHING CHARACTERISTICS
td(off)
100
tf
tr
td(on)
10
1.0
0.1
VDD =30V
VGS =10V
RG =10Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 VDD=48V 16
ID = 50A 14
60 12
VDS
40
10
VGS
8
6
20 4
2
0
0 50 100 150 200
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2499.PDF ] | |
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