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PDF SI6913DQ Data sheet ( Hoja de datos )
| Número de pieza | SI6913DQ | |
| Descripción | Dual P-Channel 12-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si6913DQ
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.021 @ VGS = -4.5 V
-12 0.028 @ VGS = -2.5 V
0.037 @ VGS = -1.8 V
ID (A)
- 5.8
- 5.0
- 4.4
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
D Battery Switch
S1 S2
TSSOP-8
D1 1 D
S1 2
S1 3
G1 4
Top View
8 D2
7 S2
6 S2
5 G2
Ordering Information: Si6913DQ-T1
G1 G2
D1
DataSheet4U.com
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 5.8
- 4.6
- 1.0
1.14
0.73
- 12
"8
- 30
-55 to 150
- 4.9
- 3.9
- 0.7
0.83
0.53
Unit
V
A
W
_C
DataShee
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
DataSheet4aU. .cSourmface Mounted on 1” x 1” FR4 Board.
Document Number: 72368
S-31914—Rev. A, 15-Sep-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
86
124
52
Maximum
110
150
65
Unit
_C/W
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Si6913DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
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Document Number: 72368
S-31914—Rev. A, 15-Sep-03
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI6913DQ.PDF ] | |
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