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PDF STW40NS15 Data sheet ( Hoja de datos )
| Número de pieza | STW40NS15 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STW40NS15
N-CHANNEL 150V - 0.042Ω - 40A TO-247
MESH OVERLAY™ MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STW40NS15
150 V <0.052Ω
40A
s TYPICAL RDS(on) = 0.042Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This powermos MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
3
2
1
TO-247
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s PRIMARYSWITCH IN ISOLATED DC-DC
CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (1)
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
150
150
±20
40
25
160
180
0.933
9
–65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
wwOcwto.bDera2t0a00Sheet4U.com
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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STW40NS15
DIM.
A
D
E
F
F3
F4
G
H
L
L3
L4
L5
M
MIN.
4.7
2.2
0.4
1
2
3
15.3
19.7
14.2
2
TO-247 MECHANICAL DATA
mm
TYP.
10.9
34.6
5.5
MAX.
5.3
2.6
0.8
1.4
2.4
3.4
15.9
20.3
14.8
3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
0.602
0.776
0.559
0.079
inch
TYP.
0.429
1.362
0.217
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
0.626
0.779
0.582
0.118
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