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PDF SIP41110 Data sheet ( Hoja de datos )
| Número de pieza | SIP41110 | |
| Descripción | (SIP41109 / SIP41110) Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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New Product
SiP41109/41110
Vishay Siliconix
Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion
FEATURES
D PWM With Tri-State Enable
D 12-V Low-Side Gate Drive (SiP41109)
D 8-V Low-Side Gate Drive (SiP41110)
D Undervoltage Lockout
D Internal Bootstrap Diode
D Switching Frequency Up to 1 MHz
D 30-ns Max Propagation Delay
D Drive MOSFETs In 5- to 48-V Systems
D Adaptive Shoot-Through Protection
APPLICATIONS
D Multi-Phase DC/DC Conversion
D High Current Low Voltage DC/DC Converters
D High Frequency DC/DC Converters
D Mobile and Desktop Computer DC/DC Converters
D Core Voltage Supplies for PC Micro-Processors
DESCRIPTION
The SiP41109 and SiP41110 are high-speed half-bridge
MOSFET drivers for use in high frequency, high current,
multiphase dc-to-dc synchronous rectifier buck power
supplies. They are designed to operate at switching
frequencies up to 1 MHz. The high-side driver is bootstrapped
to allow driving n-channel MOSFETs.
They feature adaptive shoot-through protection to prevent
simultaneous conduction of the external MOSFETs. There are
two options available for the voltage of the high-side and
TYPICAL APPLICATION CIRCUIT
+5 to 48 V
+12 V
low-side drivers. In the SiP41109, the regulator supplies gate
drive voltage to the high-side driver and VCC supplies the
low-side driver. in the SiP41110, the regulator supplies the
high- and low-side gate drive voltage.
The SiP41109 and SiP41110 are assembled in a
lead (Pb)-free 8-pin SOIC package for operation over the
industrial operating range (−40 _C to 85 _C).
PVcc
VCC
BOOT
Controller
UGATE
SiP41109/41110
PWM
(Tri-State)
PHASE
VOUT
LGATE
GND
Document Number: 73023
S-51104—Rev. A, 13-Jun-05
GND
GND
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1
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New Product
SiP41109/41110
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
PVCC
VCC
PWM
GND
Linear
Regulator
+5 V
+8-V Linear
Regulator
UVLO
OTP
UVLO
Tri-State
Detect
−
+ VBBM
(2.5 V)
VDRL
SiP41109 − VDRL = VCC (12 V)
SiP41110 − VDRL = PVCC (8 V)
Figure 1.
BOOT
UGATE
PHASE
LGATE
DETAILED OPERATION
PWM/Tri-State Enable
The PWM pin controls the switching of the external MOSFETs.
The driver logic operates in a noninverting configuration. The
PWM input stage should be driven by a signal with fast
transition times, like those provided by a PWM controller or
logic gate, (<200 ns). The PWM input functions as a logic input
and is not intended for applications where a slow changing
input voltage is used to generate a switching output when the
input switching threshold voltage is reached.
Shutdown
The SiP41109/41110 enters shutdown mode when the signal
driving PWM enters the tri-state window for more than 240 ns.
The shutdown state is removed when the PWM signal moves
outside the tri-state window. If the PWM is left open, the pin is
held to 2.5 V by an internal voltage divider, thus forcing the
tri-state condition.
Low-Side Driver
In the SiP41109, the low-side driver voltage is supplied by VCC.
In the SiP41110, the low-side driver voltage is supplied by
PVCC. During shutdown, LGATE is held low.
High-Side Driver
The high-side driver is isolated from the substrate to create a
floating high-side driver so that an n-channel MOSFET can be
Document Number: 73023
S-51104—Rev. A, 13-Jun-05
used for the high-side switch. The high-side driver voltage is
supplied by PVCC. The voltage is maintained by a floating
bootstrap capacitor, which is continually recharged by the
switching action of the output. During shutdown UGATE is
held low.
Gate Drive Voltage (PVCC) Regulator
An integrated 80-mA, 8-V regulator supplies voltage to the
PVCC pin and it current limits at 200 mA typical when the
output is shorted to ground. A capacitor (1 mF minimum) must
be connected to the PVCC pin to stabilize the regulator output.
The voltage on PVCC is supplied to the integrated bootstrap
diode. PVCC is used to recharge the bootstrap capacitor and
powers the SiP41110 low-side driver. PVCC pin can be
externally connected to VCC to bypass the 8-V regulator and
increase high-side gate drive to 12 V. If the PVCC pin is
connected to VCC the system voltage should not exceed 43V.
Bootstrap Circuit
The internal bootstrap diode and an external bootstrap
capacitor supply voltage to the BOOT pin. An integrated
bootstrap diode replaces the external diode normally needed
for the bootstrap circuit; only a capacitor is necessary to
complete the bootstrap circuit. The bootstrap capacitor is
sized according to,
CBOOT = (QGATE/(DVBOOT − VPHASE)) x 10
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIP41110.PDF ] | |
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