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Número de pieza | SI7495DP | |
Descripción | P-Channel 12-V (D-S) MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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P-Channel 12-V (D-S) MOSFET
Si7495DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0065 @ VGS = - 4.5 V
- 12 0.008 @ VGS = - 2.5 V
0.011 @ VGS = - 1.8 V
ID (A)
- 21
- 19
- 16
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
APPLICATIONS
D Load Switch
PowerPAK SO-8
6.15 mm
D
8D
7D
6D
5
S
1S
5.15 mm
2S
3G
4
Bottom View
Ordering Information: Si7495DP-T1
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 12
"8
- 21 - 13
- 17 - 10
- 50
- 4.5 - 1.6
5 1.8
3.2 1.1
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72277
S-31417—Rev. A, 07-Jul-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
20
54
1.7
Maximum
25
68
2.2
Unit
_C/W
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1 page New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si7495DP
Vishay Siliconix
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72277
S-31417—Rev. A, 07-Jul-03
www.vishay.com
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SI7495DP.PDF ] |
Número de pieza | Descripción | Fabricantes |
SI7495DP | P-Channel 12-V (D-S) MOSFET | Vishay Siliconix |
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