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PDF STD1NB50 Data sheet ( Hoja de datos )

Número de pieza STD1NB50
Descripción N-CHANNEL POWER MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STD1NB50 Hoja de datos, Descripción, Manual

® STD1NB50
N - CHANNEL 500V - 7.5- 1.4A IPAK
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST D1NB50
500V
<9
1.4 A
s TYPICAL RDS(on) = 7.5
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s FOR SMD DPAK VERSION CONTACT
SALES OFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
IPAK
TO-251
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS G ate-source Volt age
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM () Drain Current (pulsed)
Ptot T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
March 2000
Va l u e
Un it
500 V
500 V
± 36
V
1.4 A
0.91
A
5.6 A
45
0.36
W
W /o C
3.5
-65 to 150
150
( 1) ISD 1.4A, di/dt 150 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/8

1 page




STD1NB50 pdf
Normalized Gate Threshold Voltage vs
Temperature
STD1NB50
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8

5 Page










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