|
|
PDF STD2NM60 Data sheet ( Hoja de datos )
| Número de pieza | STD2NM60 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STD2NM60 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
STD2NM60
STD2NM60-1
N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK
Zener-Protected MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STD2NM60
STD2NM60-1
600V
600V
< 3.2 Ω
< 3.2 Ω
2A
2A
s TYPICAL RDS(on) = 2.8 Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
September 2002
Value
600
600
±30
2
1.26
8
46
0.37
1
15
–65 to 150
150
(1)ISD<2A, di/dt<400A/µs, VDD<V(BR)DSS, TJ<TJMAX
Unit
V
V
V
A
A
A
W
W/°C
kV
V/ns
°C
°C
1/10
1 page  
Gate Charge vs Gate-source Voltage
STD2NM60/STD2NM60-1
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs. Temperature
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STD2NM60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STD2NM60 | N-CHANNEL MOSFET | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |