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PDF LM9061 Data sheet ( Hoja de datos )

Número de pieza LM9061
Descripción Power MOSFET Driver with Lossless Protection
Fabricantes National Semiconductor 
Logotipo National Semiconductor Logotipo



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No Preview Available ! LM9061 Hoja de datos, Descripción, Manual

April 1995
LM9061
Power MOSFET Driver with Lossless Protection
General Description
The LM9061 is a charge-pump device which provides the
gate drive to any size external power MOSFET configured
as a high side driver or switch A CMOS logic compatible
ON OFF input controls the output gate drive voltage In the
ON state the charge pump voltage which is well above the
available VCC supply is directly applied to the gate of the
MOSFET A built-in 15V zener clamps the maximum gate to
source voltage of the MOSFET When commanded OFF a
110 mA current sink discharges the gate capacitances of
the MOSFET for a gradual turn-OFF characteristic to mini-
mize the duration of inductive load transient voltages and
further protect the power MOSFET
Lossless protection of the power MOSFET is a key feature
of the LM9061 The voltage drop (VDS) across the power
device is continually monitored and compared against an
externally programmable threshold voltage A small current
sensing resistor in series with the load which causes a loss
of available energy is not required for the protection circuit-
ry Should the VDS voltage due to excessive load current
exceed the threshold voltage the output is latched OFF in a
more gradual fashion (through a 10 mA output current sink)
after a programmable delay time interval
Designed for the automotive application environment the
LM9061 has a wide operating temperature range of b40 C
to a125 C remains operational with VCC up to 26V and
can withstand 60V power supply transients The LM9061 is
available in an 8-pin small outline package and an 8-pin
dual in-line package
Features
Y Built-in charge pump for gate overdrive of high side
drive applications
Y Lossless protection of the power MOSFET
Y Programmable MOSFET protection voltage
Y Programmable delay of protection latch-OFF
Y Fast turn-ON (1 5 ms max with gate capacitance of
25000 pF)
Y Undervoltage shut OFF with VCC k 7V
Y Overvoltage shut OFF with VCC l 26V
Y Withstands 60V supply transients
Y CMOS logic compatible ON OFF control input
Y Surface mount and dual in-line packages available
Applications
Y Valve relay and solenoid drivers
Y Lamp drivers
Y DC motor PWM drivers
Y Logic controlled power supply distribution switch
Y Electronic circuit breaker
Typical Application
Connection Diagrams
Top View
TL H 12317 – 3
Order Number LM9061M
See NS Package Number M08A
C1995 National Semiconductor Corporation TL H 12317
TL H 12317 – 1
Top View
TL H 12317 – 2
Order Number LM9061N
See NS Package Number N08E
RRD-B30M115 Printed in U S A

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LM9061 pdf
Typical Electrical Characteristics
Standby Supply Current
vs VCC
Operating Supply Current
vs VCC
Output Voltage
vs VCC
Output Sink Current
vs Temperature
Output Sink Current
vs Temperature
Output Source Current
vs Output Voltage
Reference Voltage
vs Temperature
Delay Threshold
vs Temperature
Delay Charge Current
vs Temperature
TL H 12317 – 06
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LM9061 arduino
Application Hints (Continued)
manufacturer for all of the MOSFETs in the array Also all
MOSFETs should have the same style heat sink or ideally
all mounted on the same heat sink The electrical connec-
tion of the MOSFETs should get special attention With typi-
cal RDS(ON) values in the range of tens of milli-Ohms a
poor electrical connection for one of the MOSFETs can ren-
der it useless in the circuit
Figure 7 shows a circuit with four parallel NDP706A
MOSFETs This particular MOSFET has a typical RDS(ON)
of 0 013X with a TJ of 25 C and 0 020X with a TJ of
a125 C
With the VDS threshold voltage being set to 500 mV this
circuit will provide a typical maximum load current of 150A
at 25 C and a typical maximum load current of 100A at
125 C The maximum dissipation per MOSFET will be
nearly 20W at 25 C and 12 5W at 125 C With up to 20W
being dissipated by each of the four devices an effective
heat sink will be required to keep the TJ as low as possible
when operating near the maximum load currents
FIGURE 7 Driving Multiple MOSFETs
TL H 12317 – 15
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