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PDF SML80T27 Data sheet ( Hoja de datos )
| Número de pieza | SML80T27 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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SML80T27
T247clip Package Outline.
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
5.38 (0.212)
6.20 (0.244)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
2
0.40 (0.016)
0.79 (0.031)
123
1.01 (0.040)
1.40 (0.055)
2.87 (0.113)
3.12 (0.123)
1.65 (0.065)
2.13 (0.084)
VDSS
ID(cont)
RDS(on)
800V
27A
0.300W
2.21 (0.087)
2.59 (0.102)
Pin 1 – Gate
Pin 2 – Drain
D
5.45 (0.215)
BSC
2plcs
Pin 3 – Source
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• New T247clip Package
(Clip–mounted TO–247 Package)
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
800 V
ID Continuous Drain Current
IDM Pulsed Drain Current 1
27 A
108 A
VGS
VGSM
Gate – Source Voltage
Gate – Source Voltage Transient
±30
V
±40
PD
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
520 W
4.16 W/°C
TJ , TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 2
–55 to 150
300
27
50
2500
°C
A
mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
W2) Starting TJ = 25°C, L = 6.86mH, RG = 25 , Peak IL = 27A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
6/99
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SML80T27.PDF ] | |
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