IRF7706 반도체 회로 부품 판매점
Power MOSFET(Vdss=-30V)
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 International Rectifier |
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
VDSS
-30V
PD -94003
IRF7706
HEXFET® Power MOSFET
RDS(on) max
22mΩ@VGS = -10V
36mΩ@VGS = -4.5V
ID
-7.0A
-5.6A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
1
2
3G
4
1= D
2= S
3= S
4= G
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
D8
7
6
S5
8= D
7= S
6= S
5= D
TSSOP-8
Max.
-30
-7.0
-5.7
-28
1.51
0.96
0.01
± 20
-55 to + 150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
83
Units
°C/W
1
10/04/00
IRF7706
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
-30 ––– –––
––– 0.015 –––
––– ––– 22
––– ––– 36
V
V/°C
mΩ
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -7.0A
VGS = -4.5V, ID = -5.6A
VGS(th)
Gate Threshold Voltage
-1.0 ––– -2.5 V VDS = VGS, ID = -250µA
gfs Forward Transconductance
6.9 ––– ––– S VDS = -10V, ID = -7.0A
IDSS Drain-to-Source Leakage Current
––– ––– -15
––– ––– -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg Total Gate Charge
––– 48 72
ID = -7.0A
Qgs Gate-to-Source Charge
––– 8.5 ––– nC VDS = -15V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 8.4 –––
––– 17 25
VGS = -10V
VDD = -15V, VGS = -10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 46 69 ns ID = -1.0A
––– 244 366
RG = 6.0Ω
––– 122 183
RD = 15Ω
Ciss Input Capacitance
––– 2211 –––
VGS = 0V
Coss
Output Capacitance
––– 339 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance
––– 207 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– -1.5
––– ––– -28
MOSFET symbol
showing the
A integral reverse
p-n junction diode.
G
D
S
––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V
––– 34 51 ns TJ = 25°C, IF = -1.5A
––– 32 48 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10sec.
2 www.irf.com
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제조업체: International Rectifier
( ir )
IRF7706 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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