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PDF SI7447DP Data sheet ( Hoja de datos )
| Número de pieza | SI7447DP | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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New Product
P-Channel 30-V (D-S) MOSFET
Si7447DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
-30 0.006 @ VGS = -10 V
ID (A)
-24
PowerPAKt SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS "25
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
-24 -14
- 19 -1 1
-60
-4.5 -1.6
5.4 1.9
3.4 1.2
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71970
S-21475—Rev. A, 26-Aug-02
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
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1
1 page  
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si7447DP
Vishay Siliconix
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
Single Pulse
0.05 0.02
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71970
S-21475—Rev. A, 26-Aug-02
www.vishay.com
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI7447DP.PDF ] | |
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