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PDF SI5855DC-T1 Data sheet ( Hoja de datos )
| Número de pieza | SI5855DC-T1 | |
| Descripción | P-Channel 1.8-V (G-S) MOSFET With Schottky Diode | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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New Product
Si5855DC
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.110 @ VGS = - 4.5 V
- 20 0.160 @ VGS = - 2.5 V
0.240 @ VGS = - 1.8 V
ID (A)
- 3.6
- 3.0
- 2.4
FEATURES
D TrenchFETr Power MOSFETS
D Ultra Low Vf Schottky
D Si5853DC Pin Compatible
APPLICATIONS
D Charging Circuit in Portable Devices
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
IF (A)
20 0.375 V @ 1 A 1.0
1206-8 ChipFETr
SK
1
A
K
K
A
S
DG
D
Bottom View
Marking Code
JB XXX
Lot Traceability
and Date Code
Part # Code
G
D
P-Channel MOSFET
A
Ordering Information: Si5855DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
VDS
VKA
VGS
- 20
20
"8
Continuous Drain Current (TJ = 150_C) (MOSFET)a
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a
Maximum Power Dissipation (Schottky)a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
- 3.6 - 2.7
- 2.6 - 1.9
- 10
- 1.8 - 0.9
1.0
7
2.1 1.1
1.1 0.6
1.9 1.1
1.0 0.56
- 55 to 150
260
Unit
V
A
W
_C
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72232
S-31406—Rev. A, 07-Jul-03
www.vishay.com
1
1 page  
New Product
Si5855DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
MOSFET
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
2
Notes:
PDM
Single Pulse
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
90_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
10
Normalized Thermal Transient Impedance, Junction-to-Foot
100 600
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
100
10
10
SCHOTTKY
Forward Voltage Drop
1
0.1
0.01
0.001
20 V
10 V
TJ = 150_C
1
TJ = 25_C
0.0001
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
Document Number: 72232
S-31406—Rev. A, 07-Jul-03
0.1
0.0
0.1 0.2 0.3 0.4 0.5
VF - Forward Voltage Drop (V)
0.6
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