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PDF SI4818DY-T1 Data sheet ( Hoja de datos )
| Número de pieza | SI4818DY-T1 | |
| Descripción | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode | |
| Fabricantes | Vishay Siliconix | |
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Si4818DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
rDS(on) (W)
0.022 @ VGS = 10 V
0.030 @ VGS = 4.5 V
0.0155 @ VGS = 10 V
0.0205 @ VGS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.50 V @ 1.0 A
ID (A)
6.3
5.4
9.5
8.2
IF (A)
2.0
D1 D2 D2 D2
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D2
6 D2
5 D2
Top View
Ordering Information: Si4818DY
Si4818DY-T1 (with Tape and Reel)
Schottky Diode
G1 G2
S1
N-Channel 1
MOSFET
S2 A
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
20
6.3 5.3 9.5 7.0
5.4 4.2 7.6 5.6
30 40
1.3 0.9 2.2 1.15
1.4 1.0 2.4 1.25
0.9 0.64 1.5 0.80
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJC
Document Number: 71122
S-31062—Rev. B, 26-May-03
Channel-1
Typ Max
72 90
100 125
51 63
Channel-2
Typ Max
43 53
82 100
25 30
Schottky
Typ Max
48 60
80 100
28 35
Unit
_C/W
www.vishay.com
1
1 page  
Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
CHANNEL−1
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
VGS = 10 thru 4 V
32
40
32
1 10
CHANNEL−2
Transfer Characteristics
24 24
TC = 125_C
16 16
8
0
0
0.030
3V
2V
2468
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
0.024
0.018
0.012
VGS = 4.5 V
VGS = 10 V
0.006
0.000
0
8 16 24 32
ID - Drain Current (A)
Document Number: 71122
S-31062—Rev. B, 26-May-03
40
8 25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
2500
Capacitance
2000
Ciss
1500
1000
500
Coss
Crss
0
0
6
12 18 24
VDS - Drain-to-Source Voltage (V)
30
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SI4818DY-T1.PDF ] | |
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