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PDF SI2341DS-T1 Data sheet ( Hoja de datos )
| Número de pieza | SI2341DS-T1 | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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New Product
P-Channel 30-V (D-S) MOSFET
Si2341DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.072 @ VGS = - 10 V
- 30
0.120 @ VGS = - 4.5 V
ID (A)b
- 2.8
- 2.0
FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
D PA Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2341DS (F1)*
*Marking Code
Ordering Information: Si2341DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 2.8
- 2.2
- 0.75
0.9
0.57
- 30
"20
- 12
- 55 to 150
- 2.5
- 2.0
- 0.6
0.71
0.45
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
RthJA
Maximum Junction-to-Foot (Drain)
RthJF
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72263
S-31675—Rev. B, 11-Aug-03
Typical
115
140
60
Maximum
140
175
75
Unit
_C/W
www.vishay.com
1
1 page  
New Product
Si2341DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100
600
Document Number: 72263
S-31675—Rev. B, 11-Aug-03
www.vishay.com
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| PDF Descargar | [ Datasheet SI2341DS-T1.PDF ] | |
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