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PDF 2SK3111 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3111 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3111
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3111 is N channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter, actuator driver.
FEATURES
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 180 mΩ MAX. (VGS = 10 V, ID = 10 A)
• Low input capacitance
Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3111
2SK3111-S
2SK3111-ZJ
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to source voltage (VGS = 0 V) VDSS
200
Gate to source voltage (VDS = 0 V)
VGSS
±30
Drain current (DC) (TC = 25 °C)
Drain current (pulse) Note1
ID(DC)
ID(pulse)
±20
±60
Total power dissipation (TA = 25 °C) PT1
1.5
Total power dissipation (TC = 25 °C) PT2
65
Channel temperature
Tch 150
Storage temperature
Single avalanche current Note2
Single avalanche energy Note2
Tstg −55 to +150
IAS 20
EAS 100
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13334EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
The mark 5 shows major revised points.
©
1998, 2000
1 page  
2SK3111
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
RDS(on) Limited
ID(pulse) PW
100µs =10µs
10
1
ID(DC)
Power Diss1ip0am3tiomsn1sLmims ited
TC = 25 ˚C
Single Pulse
0.1
1 10
100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3 ˚C/W
10
1 Rth(ch-C) = 1.92 ˚C/W
0.1
0.01
10µ
100µ
1m
10m
100m
1
PW - Pulse Width - s
Data Sheet D13334EJ1V0DS00
Single Pulse
10 100 1000
5
5 Page | ||
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| PDF Descargar | [ Datasheet 2SK3111.PDF ] | |
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