2SK168 반도체 회로 부품 판매점
Silicon N-Channel Junction FET
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 Hitachi Semiconductor |
2SK168
Silicon N-Channel Junction FET
Application
VHF Amplifier, Mixer, Local oscillator
Outline
TO-92 (2)
3
2
1
1. Gate
2. Source
3. Drain
2SK168
Absolute Maximum Ratings (Ta = 25°C)
Item
Gate to drain voltage
Gate to source voltage
Gate current
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
VGDO
VGSS
IG
ID
Pch
Tch
Tstg
Ratings
–30
–1
10
20
200
150
–55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Gate to drain breakdown
voltage
Gate cutoff current
Drain current
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Symbol
V(BR)GDO
I GSS
I
*1
DSS
VGS(off)
|yfs|
Ciss
Crss
PG
Min
–30
—
4
—
8
—
—
—
Typ
—
—
—
—
10
6.8
0.1
27
Noise figure
NF — 1.7
Note: 1. The 2SK168 is grouped by IDSS as follows.
DEF
4 to 8
6 to 12
10 to 20
Max Unit
—V
–10 nA
20 mA
–3.0 V
— mS
— pF
— pF
— dB
— dB
Test conditions
IG = –100 µA, IS = 0
VGS = –0.5 V, VDS = 0
VDS = 5 V, VGS = 0
VDS = 5 V, ID = 10 µA
VDS = 5 V, VGS = 0, f = 1 kHz
VDS = 5 V, VGS = 0, f = 1 MHz
VDS = 5 V, VGS = 0, f = 1 MHz
VDS = 5 V, VGS = 0,
f = 100 MHz
VDS = 5 V, VGS = 0,
f = 100 MHz
2
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제조업체: Hitachi Semiconductor
( hitachi )
2SK168 mosfet
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[ 2SK168.PDF ]
[ 2SK168 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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