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PDF FDD5353 Data sheet ( Hoja de datos )
| Número de pieza | FDD5353 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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April 2015
FDD5353
N-Channel Power Trench® MOSFET
60V, 50A, 12.3m
Features
General Description
Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A
Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A
100% UIL Tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
RoHS Compliant
Application
Inverter
Synchronous rectifier
Primary switch
G
S
D
DT O-P-2A5K2
(T O -25 2)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
60
±20
50
11.5
100
253
69
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RJC
RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
40
°C/W
Device Marking
FDD5353
Device
FDD5353
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
16mm
Quantity
2500 units
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
0.001
5E-4
10-6
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RJC = 1.8oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJc x RJc + TC
10-5
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
10-1
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
10-4
10-3
PDM
SINGLE PULSE
RJA = 96oC/W
(Note 1b)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJA x RJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
Figure 14. Transient Thermal Response Curve
100
1
1000
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDD5353.PDF ] | |
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