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PDF 2SK3541Y3 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3541Y3 | |
| Descripción | ESD protected N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK3541Y3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C800Y3
Issued Date : 2011.12.22
Revised Date :
Page No. : 1/8
ESD protected N-Channel Enhancement Mode MOSFET
2SK3541Y3
BVDSS
ID
RDSON@4V
Description
RDSON@2.5V
• Low voltage drive(2.5V drive) makes this device ideal for portable equipment.
• High speed switching
• ESD protected device
• Pb-free lead plating & halogen-free package
30V
100mA
3.4Ω (TYP)
6.9Ω (TYP)
Symbol
2SK3541Y3
G
Outline
SOT-723
D
G：Gate
S：Source
D：Drain
S
GS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Reverse Drain Current
Continuous
Pulsed
Total Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Note : *1. Pulse Width ≤ 10μs, Duty cycle ≤1%
*2. With each pin mounted on the recommended lands.
*3. Human body model, 1.5kΩ in series with 100pF
2SK3541Y3
Symbol
BVDSS
VGS
ID
IDP
IDR
IDRP
PD
Tj ; Tstg
Rth,ja
Limits
30
±20
±100
±200 *1
±100
±200 *1
150 *2
750 *3
-55~+150
833
Unit
V
V
mA
mA
mA
mA
mW
V
°C
°C/W
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C800Y3
Issued Date : 2011.12.22
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
100
Ciss
10
C oss
Crss
Foreward Transfer Admittance vs Drain Current
1000
VDS=3V
Ta=25°C
100
Ta=75°C
10 Ta=125°C
1
0
160
140
120
100
80
60
40
20
0
0
10 20
Drain-Source Voltage---VDS(V)
Power Derating Curve
30
50 100 150
Ambient Temperature---TA(℃)
200
1
1
10 100
Drain Current---ID(mA)
1000
2SK3541Y3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3541Y3.PDF ] | |
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