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Número de pieza | STP6506 | |
Descripción | Dual P Channel Enhancement Mode MOSFET | |
Fabricantes | Stanson Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP6506 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! STP6506
Dual P Channel Enhancement Mode MOSFET
-2.8A
DESCRIPTION
The STC6506 is the dual P-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage application, such as
notebook computer power management and other battery powered circuits where high-side
switching, low in-line power loss, and resistance to transients are needed.
PIN CONFIGURATION
TSOP-6
D1 S1 D2
06YW
FEATURE
◆ -30V/-2.8A, RDS(ON)=105mohm@VGS=-10V
◆ -30V/-2.5A, RDS(ON)=135mohm@VGS=-4.5V
◆ Super high density cell design for extremely
low RDS(ON)
◆ Exceptional an-resistance and maximum DC
current capability
◆ TSOP-6P package design
G1 S2 G2
Y: Year
A: Produces Code
p-channel
p-channel
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP6506 2010. V1
1 page TYPICAL CHARACTERICTICS
STP6506
Dual P Channel Enhancement Mode MOSFET
-2.8A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP6506 2010. V1
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet STP6506.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP6506 | Dual P Channel Enhancement Mode MOSFET | Stanson Technology |
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