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PDF 2SK3019 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3019 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | JCST | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
2SK3019 N-channel MOSFET
FEATURES
z Low on-resistance
z Fast switching speed
z Low voltage drive makes this device ideal for portable equipment
z Easily designed drive circuits
z Easy to parallel
SOT-523
1. GATE
1
2. SOURCE
3. DRAIN
Marking: KN
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol Parameter
Value
Units
VDS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30 V
±20 V
ID Continuous Drain Current
0.1 A
RθJA
PD
Thermal Resistance, Junction-to-Ambient
Power Dissipation
833
0.15
℃ /W
W
TJ Junction Temperature
Tstg Storage Temperature
150
-55~+150
℃
℃
Equivalent circuit
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
Gate Threshold Voltage
Symbol
VDS
IDSS
IGSS
VGS(th)
Drain-Source On-Resistance
RDS(on)
Forward Transconductance
Dynamic Characteristics*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics*
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
* These parameters have no way to verify.
Test Condition
VGS = 0V, ID = 10µA
VDS =30V,VGS = 0V
VGS =±20V, VDS = 0V
VDS = 3V, ID =100µA
VGS = 4V, ID =10mA
VGS =2.5V,ID =1mA
VDS =3V, ID = 10mA
VDS =5V,VGS =0V,f =1MHz
VGS =5V, VDD =5V,
ID =10mA, Rg=10Ω, RL=500Ω,
Min Typ Max Units
30 V
1 µA
±1 µA
0.8 1.5 V
8Ω
13 Ω
20 mS
13 pF
9 pF
4 pF
15 ns
35 ns
80 ns
80 ns
A,Dec,2010
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SK3019.PDF ] | |
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