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PDF SSFT3904 Data sheet ( Hoja de datos )
| Número de pieza | SSFT3904 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSFT3904 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Main Product Characteristics:
VDSS
RDS(on)
30V
2.6mΩ (typ.)
ID 110A
Features and Benefits:
TO220
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
SSFT3904
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH②
Avalanche Current @ L=0.1mH②
Operating Junction and Storage Temperature Range
Max.
110
80
440
100
0.55
30
±20
320
80
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO., LTD.
2012.11.01
www.silikron.com
Version: 2.5
page 1 of 8
1 page  
Typical thermal characteristics
SSFT3904
Figure 7: Normalized Thermal transient Impedance Curve
©Silikron Semiconductor CO., LTD.
2012.11.01
www.silikron.com
Version: 2.5
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSFT3904.PDF ] | |
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