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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1446
DESCRIPTION
·Drain Current –ID=7A@ TC=25℃
·Drain Source Voltage-
: VDSS= 450V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
450
±30
Drain Current-continuous@ TC=25℃
7
Total Dissipation@TC=25℃
35
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
V
V
A
W
℃
℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1446
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0
VSD Diode Forward Voltage
IF=7A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=4A;RL=50Ω
toff Turn-off time
MIN TYP MAX UNIT
450 V
2.0 3.0 V
0.6 0.8
Ω
±100 nA
1 mA
1.8 V
40 ns
60 ns
60 ns
220 ns
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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