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PDF TMPF830Z Data sheet ( Hoja de datos )
| Número de pieza | TMPF830Z | |
| Descripción | N-channel MOSFET | |
| Fabricantes | TRinno | |
| Logotipo |  |
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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP830Z(G)/TMPF830Z(G)
BVDSS
500V
N-channel MOSFET
ID RDS(on)
4.5A
<1.5W
Device
TMP830Z / TMPF830Z
TMP830ZG / TMPF830ZG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP830Z/ TMPF830Z
TMP830ZG/ TMPF830ZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP830Z(G) TMPF830Z(G)
500
±30
4.5 4.5 *
3.1 3.1
18 18
282
4.5
9.84
98.4 32.9
0.78 0.26
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
May 2012 : Rev0
www.trinnotech.com
TMP830Z(G)
1.27
62.5
TMPF830Z(G)
3.8
62.5
Unit
℃/W
℃/W
1/7
1 page  
TMP830Z(G)/TMPF830Z(G)
100
Duty=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
TMP830Z(G)
single pulse
PDM
t
T
Duty = t/T
Z (t) = 1.27 ℃/W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
TMPF830Z(G)
Duty=0.5
100 0.2
0.1
0.05
0.02
10-1
0.01
single pulse
10-2
PDM
t
T
Duty = t/T
Z (t) = 3.8 ℃/W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
May 2012 : Rev0
www.trinnotech.com
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TMPF830Z.PDF ] | |
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