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PDF APTGT600A60G Data sheet ( Hoja de datos )
| Número de pieza | APTGT600A60G | |
| Descripción | Phase leg Trench Field Stop IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGT600A60G
Phase leg
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 600A* @ Tc = 80°C
www.DataSheet4U.net
G1
VBUS
Q1
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
E1 OUT
Q2
G2
E2
0/VBUS
G1 VBUS
E1
E2
G2
0/VBUS
OUT
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
700 *
600 *
800
±20
2300
1200A @ 550V
Unit
V
A
V
W
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater
than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT600A60G
Operating Frequency vs Collector Current
120
VCE=300V
100 D=50%
ZVS
RG=1Ω
80 ZCS
TJ=150°C
Tc=85°C
60
40
20
0
0
Hard
switching
200 400 600
IC (A)
800 1000
Forward Characteristic of diode
1200
1000
800
600 TJ=125°C
400
TJ=150°C
200
TJ=25°C
0
0 0.4 0.8 1.2 1.6 2
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1 0.9
Diode
0.08 0.7
0.06 0.5
0.04 0.3
0.02 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT600A60G.PDF ] | |
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