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PDF APT15GN120BDQ1 Data sheet ( Hoja de datos )
| Número de pieza | APT15GN120BDQ1 | |
| Descripción | High Speed PT IGBT | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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TYPICAL PERFORMANCE CURVES
APT15GN120BDQ1
APT15GN120BDQ1(G)
APAT1P5TG1N51G20NB1D2_0SSDDQQ1(G1 )
APT15GN120SDQ1(G)
w w w . D a t a1S h2e0e0tV4 U . c o m
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
(B)
TO-247
G
C
E
D3PAK
(S)
C
GE
C
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT15GN120BD_SDQ1(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
45
22
45
45A @ 1200V
195
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RGINT
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA)
Gate Threshold Voltage (VCE = VGE, I C = 600µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
1200
5.0 5.8 6.5
1.4 1.7 2.1
2.0
200
TBD
120
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
µA
nA
Ω
Microsemi Website - http://www.microsemi.com
1 page  
TYPICAL PERFORMANCE CURVES
2,000
1,000
Cies
500
100
50
Coes
Cres
10
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT15GN120BD_SDQ1(G)
50
45 www.DataSheet4U.com
40
35
30
25
20
15
10
5
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.70
0.60
D = 0.9
0.50
0.40
0.30
0.20
0.10
0
10-5
0.7
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
140
100
50
F
max
=
min
(fmax,
f
max2)
0.05
fmax1 = t d(on) + tr + td(off) + tf
TJ = 125°C
10
TC = 75°C
D = 50 %
VCE = 800V
6 RG = 4.3Ω
fmax2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
0 5 10 15 20 25 30
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APT15GN120BDQ1.PDF ] | |
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