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Número de pieza | 5SMX12M3300 | |
Descripción | IGBT-Die | |
Fabricantes | ABB | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 5SMX12M3300 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! VCE =
IC =
3300 V
50 A
IGBT-Die
5SMX 12M3300
Die size: 13.6 x 13.6 mm
• Low loss, rugged SPT technology
• Smooth switching for good EMC
• Large bondable emitter area
• Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
VCES VGE = 0 V
DC collector current
IC
Peak collector current
ICM Limited by Tvjmax
Gate-emitter voltage
VGES
IGBT short circuit SOA
tpsc
VCC = 2500 V, VCEM ≤ 3300 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Junction temperature
Tvj
www1.)DMaataxSimhuemetr4aUte.dcvoamlues indicate limits beyond which damage to the device may occur per IEC 60747 - 9
Doc. No. 5SYA1621-02 Sep 05
min max Unit
3300 V
50 A
100 A
-20 20 V
10 µs
-40 125 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page 5SMX 12M3300
20
VCC = 1800
10
Cies
VGE = 0 V
15 fOSC = 1 MHz
VCC = 2500
1 VOSC = 50 mV
Coes
10
5
IC = 50 A
Tvj = 25 °C
0
0.0 0.1 0.2 0.3 0.4 0.5
Qg [µC]
Fig. 5 Typical gate charge characteristics
0.1 Cres
0.01
0
5 10 15 20 25 30 35
VCE [V]
Fig. 6 Typical capacitances vs
collector-emitter voltage
www.DataSheet4U.com
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email
Internet www.abb.com/semiconductors
Doc. No. 5SYA1621-02 Sep 05
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 5SMX12M3300.PDF ] |
Número de pieza | Descripción | Fabricantes |
5SMX12M3300 | IGBT-Die | ABB |
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